SFP12N65 SFP12N65 SFP12N65 SFP12N65 c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . silicon silicon silicon silicon n-cha n-cha n-cha n-cha n n n n nel nel nel nel mosfet mosfet mosfet mosfet features 12a,650 v , r ds(on) (ma x 0. 7 8 )@v gs =10v ultra-low gate charge( t y pical 30nc) fast switching capability 100% a v alanche t e sted ma x imum junction t e mperature range(150 ) general description this power mosfet is produced using winsem i s ad v anced planar stripe, vdmos technolog y . this latest technology has been especially designed to minimi z e on-state resistance, ha v e a high rugged a v alanche characteristics. this de v ices is specially well suited for ac-dc switching power supplies, dc-dc power con v erters, high v oltage h-bridge motor dri v e pmw absolute maximum ratings s y mbol parameter v a lue units v dss drain source v o ltage 650 v i d continuous drain current(@ t c =25 ) 12 a continuous drain current(@ t c =100 ) a i dm drain current pulsed (note1) a v gs gate to source v o ltage 30 v e as single pulsed a v alanche energy (note 2) 990 mj e ar repetiti v e a v alanche energy (note 1) 22 mj dv/dt peak diode reco v ery d v /dt (note 3) 4.5 v/ns p d t o tal power dissipation(@ t c =25 ) 178 w derating factor abo v e 25 1.43 w/ t j , t stg junction and storage t e mperature -55~150 t l channel t e mperature 300 thermal characteristics s y mbol parameter v a lue units min t yp max r q jc thermal resistance, junction-to-case - - 0.70 / w r qcs thermal resistance, case-to-sink - - - / w r q ja thermal resistance, junction-to-ambient - - 62.5 / w re v , a no v . 2008
SFP12N65 SFP12N65 SFP12N65 SFP12N65 2/7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characte r istics (t c = 2 5 c) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v, v ds = 0 v - - 100 na gate ? source breakdown v oltage v (br)gss i g = 10 a, v ds = 0 v 30 - - v drain cut ? off current i dss v ds = 650 v, v gs = 0 v - - 10 a v ds = 480 v, tc = 125 c c c c - - 100 a drain ? source breakdown v oltage v (br)dss i d = 250 a, v gs = 0 v 650 - - v gate threshold v oltage v gs(th) v ds = 10 v, i d =250 a 3 - 4 .5 v drain ? source on resistance r ds(on) v gs = 10 v, i d = 6a - 0.64 0. 7 8 ? forward transconductance gfs v ds = 50 v, i d =6a - 6.4 - s input capacitance c i ss v ds = 25 v, v gs = 0 v , f = 1 mhz - 1830 - pf re v erse transfer capacitance c r ss - 155 - output capacitance c o ss - 2.0 - switching time rise time tr v dd =325v, i d = 12a r g =25 ? (note4,5) - 50 - ns turn ? on time ton - 49 - fall time tf - 310 - turn ? off time toff - 54 - total gate charge (gate ? source plus gate ? drain) q g v dd =520 v, v gs = 10 v, i d = 12a (note4,5) - 51.7 - nc gate ? source charge q gs - 9.6 - gate ? drain ( miller ) charge q gd - 18.6 - source ? drain ratings and characteristics (ta = 2 5 c) characteristics symbol test condition min type max unit continuous drain re v e r se current i dr - - - 12 a pulse drain re v erse current i drp - - - 48 a forward v oltage (diode) v dsf idr = 10a, vgs = 0 v - - 1.4 v re v erse reco v ery time trr idr = 10 a, vgs = 0 v, didr / dt = 100 a / s - 450 - ns re v erse reco v ery charge qrr - 5.0 - c note 1.repeati v i t y rating :pulse w i dth limited by junction temperature 2.l=14mh,i a s = 12a, v dd =95 v ,r g =2 5 ,starting t j =2 5 3.i sd 10a,di/dt 200 a /us, v dd SFP12N65 SFP12N65 SFP12N65 SFP12N65 3 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig. fig. fig. fig. 1 1 1 1 on-state on-state on-state on-state characteristics characteristics characteristics characteristics fig.2 fig.2 fig.2 fig.2 t t t t r r r r a a a a nsfer nsfer nsfer nsfer current current current current characteristics characteristics characteristics characteristics fig.3 fig.3 fig.3 fig.3 on-resistance on-resistance on-resistance on-resistance v v v v a a a a riation riation riation riation vs vs vs vs drain drain drain drain current current current current fig.5 fig.5 fig.5 fig.5 on-resistance on-resistance on-resistance on-resistance v v v v a a a a riation riation riation riation vs vs vs vs junction junction junction junction t t t t e e e e mperature mperature mperature mperature fig.4 fig.4 fig.4 fig.4 body body body body diode diode diode diode for for for for w w w w a a a a rd rd rd rd v v v v o o o o ltage ltage ltage ltage v v v v a a a a riation riation riation riation w w w w i i i i th th th th source source source source current current current current and and and and t t t t e e e e mperature mperature mperature mperature fig.6 fig.6 fig.6 fig.6 gate gate gate gate charge charge charge charge characteristics characteristics characteristics characteristics
SFP12N65 SFP12N65 SFP12N65 SFP12N65 4 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.7 fig.7 fig.7 fig.7 maximum maximum maximum maximum safe safe safe safe operation operation operation operation area area area area fig.8 fig.8 fig.8 fig.8 maximum maximum maximum maximum d d d d r r r r ain ain ain ain cu cu cu cu r r r r r r r r ent ent ent ent vs vs vs vs case case case case t t t t e e e e mperatu mperatu mperatu mperatu re re re re fig.9 fig.9 fig.9 fig.9 t t t t r r r r a a a a nsie nsie nsie nsie nt nt nt nt thermal thermal thermal thermal response response response response curve curve curve curve
SFP12N65 SFP12N65 SFP12N65 SFP12N65 5 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.10 gate test circuit & waveform fig.11 r esistive switching test circuit & waveform fig.12 uncamped inductive switching test circuit & waveform
SFP12N65 SFP12N65 SFP12N65 SFP12N65 6 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.13 peak diode recovery dv/dt test circuit & waveform
SFP12N65 SFP12N65 SFP12N65 SFP12N65 7 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit:mm
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